DMP2066LSS
30
20
24
18
12
V GS = 10V
V GS = 4.5V
V GS = 3.0V
V GS = 2.5V
16
12
8
V DS = 5.0V
6
V GS = 2.0V
4
T A = 150°C
T A = 85°C
0
0
V GS = 1.5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
5
0
0
T A = 125°C           T A = 25°C
T A = -55°C
0.5 1 1.5 2 2.5 3 3.5
4
1
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.08
0.06
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
V GS = 4.5V
T A = 150°C
T A = 125°C
0.1
V GS = 2.5V
V GS = 4.5V
V GS = 10V
0.04
0.02
T A = 85°C
T A = 25°C
T A = -55°C
0.01
0
6 12 18 24
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0
0
6 12 18 24
-I D , DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
1.6
2.4
1.4
1.2
V GS = 10V
I D = 10A
2.0
1.6
1.0
V GS = 4.5V
I D = 5A
1.2
0.8
I D = 1mA
I D = 250μA
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
0.4
0
-50 -25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
DMP2066LSS
Document number: DS31522 Rev. 3 - 2
3 of 5
www.diodes.com
November 2013
? Diodes Incorporated
相关PDF资料
DMP2066UFDE-7 MOSF P CH 20V 6.2A U-DFN2020-6E
DMP2069UFY4-7 MOSFET P-CH 20V 2.5A 3-DFN
DMP2070UCB6-7 MOSFET P-CH 20V 2.5A U-WLB1510-6
DMP2100UCB9-7 MOSFET P CH 20V 3A U-WLB1515-9
DMP2104LP-7 MOSFET P-CH 20V 1.5A 3-DFN
DMP2104V-7 MOSFET P-CH 20V 860MA SOT-563
DMP2123L-7 MOSFET P-CH 20V 3A SOT23-3
DMP2130L-7 MOSFET P-CH 20V 3A SOT23-3
相关代理商/技术参数
DMP2066LVT-7 制造商:Diodes Incorporated 功能描述:MOSFET P-CH 20V TSOT26
DMP2066UFDE 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:25V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2066UFDE-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2069UFY4 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2069UFY4-7 功能描述:MOSFET MOSFET P-CHAN. RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2070UCB6-7 功能描述:MOSFET MOSFET BVDSS: 25V-30 U-WLB1015-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2100U-7 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET P-CH 20V 4.3A T/R 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P CH 20V 4.3A SOT23 制造商:Diodes Incorporated 功能描述:20V P-CH MOSFET
DMP2100UCB9-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube